| PART |
Description |
Maker |
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| IRGC14C40LD IRGC14C40LC IRGC14C40LB IRGC14C40LBPBF |
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | CHIP
14 A, 370 V, N-CHANNEL IGBT
|
|
| IRGC100B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|芯片
|
Belden, Inc.
|
| F8A06FF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220VAR 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）|20VAR
|
Glenair, Inc.
|
| F15A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 15A I(C) | TO-247 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|5A一（c）|47
|
Panasonic Industrial Solutions
|
| OM6556SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
|
Mitsubishi Electric, Corp.
|
| ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| IXLK35N120AU1 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 58A I(C) | TO-264AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 58A条一（c）|64AA
|
IXYS, Corp.
|
| IXGA15N120C |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）|63AA
|
IXYS, Corp.
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
| HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
